Coherent‐electron intrinsic multistability in a double‐barrier tunneling diode

Coherent-electron intrinsic multistability in a double-barrier tunneling diode

Recently, a new mechanism leading to electrical multistability in coherent-electron tunneling devices was proposed. The reflection of coherent electrons at a barrier leads to the formation of resonant states in a quantum well in front of the barrier, and the resulting strongly modulated local density of states allows for multiple stable solutions of the Poisson equation to exist at fixed bias. ...

Resonant tunneling diode pdf

Quantitative simulation of a resonant tunneling diode

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S - shaped current bistability in a bipolar resonant tunneling diode

The bipolar tunneling transport through p—i—n double barrier structures has been studied by means of simultaneous electrical transport measurements and electroluminescence spectroscopy. An “inverted” hysteresis loop is observed at the onset of the first electronic resonance in the current—voltage characteristics with an electrical ON/OFF ratio of more than two orders of magnitude. Relating the ...

High magnetic field tunneling transport in a double quantum well-triple barrier resonant tunneling diode

We have measured the magnetotransport of double GaAs quantum well-triple AlAs barrier resonant tunneling heterostructures in pulsed magnetic fields up to 48 T, and temperatures down to 0.3 K. The tunneling structure is designed for a near-simultaneous (triple) resonance, under bias, of the quantum well energy levels and the lowest quasi-2D emitter state. The fan chart of the I(V) resonances is ...